Twinning dislocations

April 5, 2011

Twinning dislocations on {-1 0 1 1} and {-1 0 1 3} source planes in hexagonal close-packed crystals

J Wang et al

The objective of this investigation was to identify the elementary twinning dislocations (TDs) for {-1 01 1} and {-1 0 1 3} twins by fully characterizing their structure for an Mg crystal. For both {-1 0 1 1} and {-1 0 1 3} twins, we conclude that the 2-layer TD, not the 4-layer TD, is the active TD in twinning. The 4-layer TD can be considered as the combination of two 2-layer TDs with opposite-sign screw components. Molecular statics simulations of the Peierls energy show why the TDs of both twinning modes (for c/a ratios > 1.5) are only activated when the c-axis experiences a compressive strain. The simulations predict that 2-layer TDs are more mobile than 4-layer TDs and that the mobility of these twinning dislocations depends strongly on dislocation character. Correspondingly, the influence of TDs involved in deformation twinning processes on deformation twins is discussed.


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